BSP316PL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

1.8 Ω

Package :

Bulk

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

0.68 A

Manufacturer :

Infineon Technologies AG

Technology :

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds :

146 pF @ 25 V

Drain to Source Breakdown Voltage :

-100 V

Number of Elements :

1

Mount :

Surface Mount

Power Dissipation :

1.8 W

Height :

1.8 mm

Transistor Element Material :

SILICON

Operating Temperature :

-55°C ~ 150°C (TJ)

Series :

SIPMOS®

Nominal Vgs :

-1.5 V

Drain to Source Resistance :

1.4 Ω

Current Rating :

-680 mA

Package Shape :

RECTANGULAR

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2V @ 170µA

Gate to Source Voltage (Vgs) :

20 V

Max Power Dissipation :

1.8 W

Surface Mount :

yes

Vgs (Max) :

±20V

Lead Free :

Lead Free

Current :

68 A

Package / Case :

TO-261-4, TO-261AA

Turn-On Delay Time :

4.7 ns

Pin Count :

4

Mounting Type :

Surface Mount

Max Junction Temperature (Tj) :

150 °C

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

-100 V

Number of Terminals :

4

Turn-Off Delay Time :

67.4 ns

Drain-source On Resistance-Max :

1.8 Ω

Product Status :

Active

JESD-30 Code :

R-PDSO-G4

Voltage Rating (DC) :

-100 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

P-Channel

Subcategory :

Other Transistors

Terminal Position :

Dual

Number of Channels :

1

Continuous Drain Current (ID) :

-680 mA

Rds On (Max) @ Id, Vgs :

1.8Ohm @ 680mA, 10V

DS Breakdown Voltage-Min :

100 V

RoHS :

Compliant

Pulsed Drain Current-Max (IDM) :

2.72 A

Power Dissipation (Max) :

1.8W (Ta)

HTS Code :

8541.29.00.95

Supplier Device Package :

PG-SOT223-4-21

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

680mA (Ta)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

1.8 W

Voltage :

100 V

FET Feature :

-

Max Operating Temperature :

150 °C

Min Operating Temperature :

-55 °C

Terminal Finish :

MATTE TIN

Case Connection :

DRAIN

Manufacturer Package Identifier :

PG-SOT223-4

Gate Charge (Qg) (Max) @ Vgs :

6.4 nC @ 10 V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance :

146 pF

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Number of Pins :

4

Rise Time :

7.5 ns