BSP316PH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Length :

6.5mm

Number of Pins :

4

Series :

SIPMOS®

Width :

3.5mm

Package / Case :

TO-261-4, TO-261AA

Vgs (Max) :

±20V

JESD-609 Code :

e3

Height :

1.6mm

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

4

Turn On Delay Time :

4.7 ns

Mounting Type :

Surface Mount

Fall Time (Typ) :

25.9 ns

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

0.68A

Vgs(th) (Max) @ Id :

2V @ 170µA

Lead Free :

Lead Free

Element Configuration :

Single

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

146pF @ 25V

Turn-Off Delay Time :

67.4 ns

Published :

2002

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE

Continuous Drain Current (ID) :

680mA

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Factory Lead Time :

10 Weeks

Pbfree Code :

yes

Case Connection :

DRAIN

Mount :

Surface Mount

Power Dissipation :

1.8W

Pulsed Drain Current-Max (IDM) :

2.72A

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Max Dual Supply Voltage :

-100V

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

Gate to Source Voltage (Vgs) :

20V

Rise Time :

7.5ns

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 680mA, 10V

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1.8W Ta

Current - Continuous Drain (Id) @ 25°C :

680mA Ta