BSP316PE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

100V

Series :

SIPMOS®

Packaging :

Tape and Reel (TR)

Current Rating :

-680mA

Vgs(th) (Max) @ Id :

2V @ 170µA

Rds On Max :

1.8 Ω

Voltage - Rated DC :

-100V

Vgs (Max) :

±20V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

680mA Ta

Rds On (Max) @ Id, Vgs :

1.8Ohm @ 680mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

146pF @ 25V

Gate to Source Voltage (Vgs) :

20V

FET Type :

P-Channel

Rise Time :

7.5ns

Package / Case :

TO-261-4, TO-261AA

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

RoHS Status :

Non-RoHS Compliant

Number of Pins :

4

Continuous Drain Current (ID) :

680mA

Published :

2002

Mounting Type :

Surface Mount

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

146pF

Power Dissipation-Max :

1.8W Ta

Power Dissipation :

1.8W

Supplier Device Package :

PG-SOT223-4