BSP315PH6327XTSA1
- Mfr.Part #
- BSP315PH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 1.17A SOT223-4
- Stock
- 103,509
- In Stock :
- 103,509
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Junction Temperature (Tj) :
- 150°C
- Pbfree Code :
- yes
- Dual Supply Voltage :
- -60V
- Current - Continuous Drain (Id) @ 25°C :
- 1.17A Ta
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Max Dual Supply Voltage :
- -60V
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-261-4, TO-261AA
- Number of Elements :
- 1
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Height :
- 1.8mm
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Termination :
- SMD/SMT
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 160pF @ 25V
- Halogen Free :
- Halogen Free
- Turn On Delay Time :
- 24 ns
- Pin Count :
- 4
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Nominal Vgs :
- -1.5 V
- Power Dissipation-Max :
- 1.8W Ta
- Drain to Source Breakdown Voltage :
- -60V
- Fall Time (Typ) :
- 19 ns
- Recovery Time :
- 46 ns
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 1.17A
- Number of Channels :
- 1
- Manufacturer Package Identifier :
- PG-SOT223-4
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Length :
- 6.5mm
- Published :
- 1999
- Factory Lead Time :
- 10 Weeks
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs(th) (Max) @ Id :
- 2V @ 160μA
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 1.17A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 10V
- Width :
- 6.7mm
- Turn-Off Delay Time :
- 32 ns
- FET Type :
- P-Channel
- Rise Time :
- 9ns
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Threshold Voltage :
- -1.5V
- Series :
- SIPMOS®
- Power Dissipation :
- 1.8W
- Drain-source On Resistance-Max :
- 0.8Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Cut Tape (CT)
- Datasheets
- BSP315PH6327XTSA1

P-Channel Cut Tape (CT) 800m Ω @ 1.17A, 10V ±20V 160pF @ 25V 7.8nC @ 10V 60V TO-261-4, TO-261AA
BSP315PH6327XTSA1 Description
BSP315PH6327XTSA1 are s mall signal transistors which are transistors used to amplify low-level signals, but they can also be used as switches. The typical IC values of small signal transistors are between 10 and 500, and the maximum HFE rating is between 80 and 600 mA. They come in two forms: NPN and PNP.
BSP315PH6327XTSA1 Features
·P-Channel Enhancement mode Avalanche rated
·Logic Level
·dv/dtrated
·Pb-free lead plating;RoHS compliant
·Qualified according to AEC Q101
·Halogen-free according to IEC61249-2-21
BSP315PH6327XTSA1 Applications
Small-Signal-Transistor
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