BSP300 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 1mA

Series :

SIPMOS®

Pulsed Drain Current-Max (IDM) :

0.76A

Published :

2007

Drain Current-Max (Abs) (ID) :

0.19A

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

190mA Ta

Avalanche Energy Rating (Eas) :

36 mJ

HTS Code :

8541.29.00.95

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

20 Ω @ 190mA, 10V

Peak Reflow Temperature (Cel) :

255

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Pin Count :

4

DS Breakdown Voltage-Min :

800V

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G4

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

800V

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.8W Ta

Package / Case :

TO-261-4, TO-261AA