BSO4822

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.01Ohm

Vgs (Max) :

±20V

ECCN Code :

EAR99

Number of Elements :

1

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

26.2nC @ 5V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Power Dissipation :

2.5W

Voltage - Rated DC :

30V

Turn-Off Delay Time :

30 ns

Rise Time :

38ns

Current - Continuous Drain (Id) @ 25°C :

12.7A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

16 ns

Terminal Position :

Dual

Terminal Finish :

MATTE TIN

Pin Count :

8

RoHS Status :

RoHS Compliant

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (Eas) :

165 mJ

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 25V

Current Rating :

12.7A

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

12.7A

Number of Pins :

8

Series :

OptiMOS™

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta

Pulsed Drain Current-Max (IDM) :

51A

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

JESD-609 Code :

e3

Published :

2002

Drain to Source Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

10m Ω @ 12.7A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 55μA