BSC900N20NS3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

26 Weeks

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.09Ohm

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Number of Pins :

8

ECCN Code :

EAR99

Power Dissipation :

62.5W

Number of Terminations :

5

JESD-30 Code :

R-PDSO-F5

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 100V

Series :

OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

11.6nC @ 10V

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Pbfree Code :

No

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

4V @ 30μA

JESD-609 Code :

e3

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

FET Type :

N-Channel

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-PowerTDFN

Continuous Drain Current (ID) :

15.2A

Power Dissipation-Max :

62.5W Tc

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

90m Ω @ 7.6A, 10V

Current - Continuous Drain (Id) @ 25°C :

15.2A Tc

RoHS Status :

ROHS3 Compliant

Rise Time :

4ns

Qualification Status :

Not Qualified

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

200V

Vgs (Max) :

±20V

Published :

2011