BSC600N25NS3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Vgs(th) (Max) @ Id :

4V @ 90µA

Lead Free :

Contains Lead

Factory Lead Time :

26 Weeks

Case Connection :

DRAIN

Number of Pins :

8

Halogen Free :

Halogen Free

Rds On (Max) @ Id, Vgs :

60m Ω @ 25A, 10V

Terminal Form :

Flat

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.06Ohm

Pin Count :

8

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mount :

Surface Mount

Continuous Drain Current (ID) :

25A

Power Dissipation :

125W

Number of Terminations :

5

Max Dual Supply Voltage :

250V

Vgs (Max) :

±20V

Contact Plating :

Tin

Package / Case :

8-PowerTDFN

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PDSO-F5

Number of Elements :

1

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

No

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Power Dissipation-Max :

125W Tc

Rise Time :

10ns

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 100V