BSC360N15NS3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

36m Ω @ 25A, 10V

Number of Terminations :

5

Continuous Drain Current (ID) :

33A

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-F5

Power Dissipation-Max :

74W Tc

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Factory Lead Time :

26 Weeks

REACH SVHC :

No SVHC

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Dual Supply Voltage :

150V

Drain to Source Breakdown Voltage :

150V

Rise Time :

6ns

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

4V @ 45μA

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Package / Case :

8-PowerTDFN

Pbfree Code :

No

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Height :

1.1mm

Terminal Position :

Dual

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Pin Count :

8

Halogen Free :

Halogen Free

Qualification Status :

Not Qualified

Series :

OptiMOS™

Vgs (Max) :

±20V

Max Junction Temperature (Tj) :

150°C

Turn-Off Delay Time :

12 ns

Drain-source On Resistance-Max :

0.036Ohm

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Threshold Voltage :

3V

Turn On Delay Time :

9 ns

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 75V

Power Dissipation :

74W

Operating Temperature :

-55°C~150°C TJ

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

33A Tc

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON