BSB165N15NZ3G

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Mfr.Part #
BSB165N15NZ3G
Manufacturer
Infineon Technologies
Package / Case
Datasheet
Download
Description
BSB165N15 - 12V-300V N-CHANNEL P
Stock
15,175
In Stock :
15,175

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
icon-pbfree yes
Operating Mode :
ENHANCEMENT MODE
Channel Type :
N
Terminal Form :
NO LEAD
Transistor Application :
SWITCHING
Operating Temperature (Max) :
150°C
Drain Current-Max (Abs) (ID) :
45A
Avalanche Energy Rating (Eas) :
440 mJ
Surface Mount :
yes
Terminal Finish :
Silver/Nickel (Ag/Ni)
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.0165ohm
Terminal Position :
BOTTOM
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
RoHS Status :
RoHS Compliant
Transistor Element Material :
SILICON
Case Connection :
DRAIN
DS Breakdown Voltage-Min :
150V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
3
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Reach Compliance Code :
Compliant
JESD-609 Code :
e4
Number of Terminals :
3
Power Dissipation-Max (Abs) :
78W
Qualification Status :
Not Qualified
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-MBCC-N3
Pulsed Drain Current-Max (IDM) :
180A
Continuous Drain Current Id :
9
Datasheets
BSB165N15NZ3G
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSB165N15NZ3G from Chip IC,where excellence meets affordability. This product stands out with its BSB165N15NZ3G pinout, BSB165N15NZ3G datasheet PDF, BSB165N15NZ3G amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSB165N15NZ3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.





BSB165N15NZ3 G Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 440 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 45A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 180A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150V in order to maintain normal operation.

BSB165N15NZ3 G Features


the avalanche energy rating (Eas) is 440 mJ
based on its rated peak drain current 180A.


BSB165N15NZ3 G Applications


There are a lot of Infineon Technologies AG
BSB165N15NZ3 G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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