BSB165N15NZ3G
- Mfr.Part #
- BSB165N15NZ3G
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- BSB165N15 - 12V-300V N-CHANNEL P
- Stock
- 15,175
- In Stock :
- 15,175
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- icon-pbfree yes
- Operating Mode :
- ENHANCEMENT MODE
- Channel Type :
- N
- Terminal Form :
- NO LEAD
- Transistor Application :
- SWITCHING
- Operating Temperature (Max) :
- 150°C
- Drain Current-Max (Abs) (ID) :
- 45A
- Avalanche Energy Rating (Eas) :
- 440 mJ
- Surface Mount :
- yes
- Terminal Finish :
- Silver/Nickel (Ag/Ni)
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.0165ohm
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 150V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Reach Compliance Code :
- Compliant
- JESD-609 Code :
- e4
- Number of Terminals :
- 3
- Power Dissipation-Max (Abs) :
- 78W
- Qualification Status :
- Not Qualified
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-MBCC-N3
- Pulsed Drain Current-Max (IDM) :
- 180A
- Continuous Drain Current Id :
- 9
- Datasheets
- BSB165N15NZ3G
BSB165N15NZ3 G Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 440 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 45A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 180A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150V in order to maintain normal operation.
BSB165N15NZ3 G Features
the avalanche energy rating (Eas) is 440 mJ
based on its rated peak drain current 180A.
BSB165N15NZ3 G Applications
There are a lot of Infineon Technologies AG
BSB165N15NZ3 G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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