BS870-7
- Mfr.Part #
- BS870-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 250MA SOT23-3
- Stock
- 163,049
- In Stock :
- 163,049
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 300mW Ta
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Weight :
- 7.994566mg
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 2 ns
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Drain Current-Max (Abs) (ID) :
- 0.25A
- Lead Free :
- Contains Lead
- Published :
- 2005
- JESD-609 Code :
- e3
- Width :
- 1.3mm
- Voltage - Rated DC :
- 60V
- Continuous Drain Current (ID) :
- 250mA
- Vgs (Max) :
- ±20V
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 10V
- Feedback Cap-Max (Crss) :
- 5 pF
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- Non-RoHS Compliant
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 5 ns
- Qualification Status :
- Not Qualified
- Length :
- 2.9mm
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 200mA, 10V
- Number of Channels :
- 1
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 300mW
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 5Ohm
- Height :
- 1mm
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 250mA Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Current Rating :
- 250mA
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Datasheets
- BS870-7
BS870-7 Documents

N-Channel Tape & Reel (TR) 5 Ω @ 200mA, 10V ±20V 50pF @ 10V TO-236-3, SC-59, SOT-23-3
BS870-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 50pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 250mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.25A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 5 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 2 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
BS870-7 Features
a continuous drain current (ID) of 250mA
the turn-off delay time is 5 ns
BS870-7 Applications
There are a lot of Diodes Incorporated
BS870-7 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BS870-7-F | Diodes Incorporated | 323,394 | MOSFET N-CH 60V 250MA SOT23-3 |
| BS870Q-7-F | Diodes Incorporated | 5,639 | MOSFET N-CH 60V 250MA SOT23 |
















