BS250FTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

90mA Ta

Pin Count :

3

Fall Time (Typ) :

10 ns

JESD-609 Code :

e3

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

45V

Rds On (Max) @ Id, Vgs :

14 Ω @ 200mA, 10V

Resistance :

14Ohm

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Current Rating :

-90mA

Published :

1997

Pbfree Code :

yes

Height :

1mm

Element Configuration :

Single

Mounting Type :

Surface Mount

Terminal Position :

Dual

Vgs (Max) :

±20V

FET Type :

P-Channel

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.09A

Number of Channels :

1

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Voltage - Rated DC :

-45V

Number of Pins :

3

Lead Free :

Lead Free

Weight :

7.994566mg

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Rise Time :

10ns

REACH SVHC :

No SVHC

Number of Elements :

1

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

10 ns

Length :

2.9mm

Continuous Drain Current (ID) :

90mA

Threshold Voltage :

-3.5V

Nominal Vgs :

-3.5 V

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Factory Lead Time :

17 Weeks

Turn-Off Delay Time :

10 ns

Power Dissipation-Max :

330mW Ta

Width :

1.3mm

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

330mW

Packaging :

Cut Tape (CT)