BS108G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

250mA

Current Rating :

250mA

Pin Count :

3

Drain Current-Max (Abs) (ID) :

0.25A

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e1

Additional Feature :

LOGIC LEVEL COMPATIBLE

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Rds On (Max) @ Id, Vgs :

8 Ω @ 100mA, 2.8V

Transistor Application :

SWITCHING

Number of Pins :

3

Voltage - Rated DC :

200V

Threshold Voltage :

1.5V

Transistor Element Material :

SILICON

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

2V 2.8V

Number of Elements :

1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn-Off Delay Time :

15 ns

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Number of Terminations :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

250mA Ta

Power Dissipation :

350mW

FET Type :

N-Channel

Drain-source On Resistance-Max :

8Ohm

Published :

2007

Terminal Position :

BOTTOM

Power Dissipation-Max :

350mW Ta

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Drain to Source Breakdown Voltage :

200V

Pbfree Code :

yes

Mount :

Through Hole

Lead Free :

Lead Free