BS108G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

0.25A

JESD-609 Code :

e1

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Drain-source On Resistance-Max :

8Ohm

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

350mW Ta

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Continuous Drain Current (ID) :

250mA

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

250mA Ta

Drive Voltage (Max Rds On,Min Rds On) :

2V 2.8V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Number of Elements :

1

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.5V @ 1mA

FET Type :

N-Channel

Voltage - Rated DC :

200V

Turn-Off Delay Time :

15 ns

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

1.5V

Power Dissipation :

350mW

Terminal Position :

BOTTOM

Published :

2007

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Rds On (Max) @ Id, Vgs :

8 Ω @ 100mA, 2.8V

Mount :

Through Hole

Current Rating :

250mA

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

200V