BS108,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

200V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

0.3A

Drive Voltage (Max Rds On,Min Rds On) :

2.8V

Drain-source On Resistance-Max :

5Ohm

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Transistor Application :

SWITCHING

Terminal Position :

BOTTOM

Surface Mount :

No

Drain to Source Voltage (Vdss) :

200V

Operating Mode :

ENHANCEMENT MODE

Published :

2001

JESD-30 Code :

O-PBCY-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Feedback Cap-Max (Crss) :

15 pF

Qualification Status :

Not Qualified

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

1W Ta

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Rds On (Max) @ Id, Vgs :

5 Ω @ 100mA, 2.8V

HTS Code :

8541.29.00.95

Vgs(th) (Max) @ Id :

1.8V @ 1mA

Packaging :

Tape and Box (TB)