BS107PSTZ
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- Mfr.Part #
- BS107PSTZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 120MA E-LINE
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- Automotive, AEC-Q101
- JESD-30 Code :
- O-PBCY-W3
- Current Rating :
- 120mA
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 7 ns
- Vgs (Max) :
- ±20V
- Terminal Position :
- BOTTOM
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 120mA Ta
- Continuous Drain Current (ID) :
- 120mA
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 200V
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.6V 5V
- Factory Lead Time :
- 17 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Additional Feature :
- High Reliability
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Weight :
- 453.59237mg
- Fall Time (Typ) :
- 8 ns
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Published :
- 2012
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 85pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- 200V
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 16 ns
- Terminal Form :
- Wire
- Package / Case :
- E-Line-3
- Feedback Cap-Max (Crss) :
- 7 pF
- Rise Time :
- 8ns
- Power Dissipation :
- 500mW
- Power Dissipation-Max :
- 500mW Ta
- Rds On (Max) @ Id, Vgs :
- 30 Ω @ 100mA, 5V
- Datasheets
- BS107PSTZ
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N-Channel Tape & Reel (TR) 30 Ω @ 100mA, 5V ±20V 85pF @ 25V E-Line-3
BS107PSTZ Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 85pF @ 25V.This device conducts a continuous drain current (ID) of 120mA, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 16 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 2.6V 5V volts (2.6V 5V).
BS107PSTZ Features
a continuous drain current (ID) of 120mA
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 16 ns
BS107PSTZ Applications
There are a lot of Diodes Incorporated
BS107PSTZ applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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