BS107PSTOA
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- Mfr.Part #
- BS107PSTOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 120MA E-LINE
- Stock
- 11,674
- In Stock ：
- 11,674
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1
- Terminal Form :
- Wire
- Package / Case :
- E-Line-3
- Reach Compliance Code :
- Unknown
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 500mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Rds On (Max) @ Id, Vgs :
- 30 Ω @ 100mA, 5V
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 200V
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 120mA Ta
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2012
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 200V
- JESD-30 Code :
- R-PSIP-W3
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.6V 5V
- Pin Count :
- 3
- Power Dissipation-Max :
- 500mW Ta
- Weight :
- 453.59237mg
- Current Rating :
- 120mA
- Continuous Drain Current (ID) :
- 120mA
- Drain-source On Resistance-Max :
- 23Ohm
- Datasheets
- BS107PSTOA
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N-Channel Tape & Reel (TR) 30 Ω @ 100mA, 5V ±20V E-Line-3
BS107PSTOA Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120mA amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (2.6V 5V).
BS107PSTOA Features
a continuous drain current (ID) of 120mA
a drain-to-source breakdown voltage of 200V voltage
BS107PSTOA Applications
There are a lot of Diodes Incorporated
BS107PSTOA applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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