BS107P

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

200V

Terminal Form :

Wire

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

500mW Ta

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

2.6V 5V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Power Dissipation :

500mW

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Length :

4.77mm

Continuous Drain Current (ID) :

120mA

Voltage - Rated DC :

200V

Mount :

Through Hole

Pin Count :

3

Vgs (Max) :

±20V

Feedback Cap-Max (Crss) :

7 pF

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

453.59237mg

REACH SVHC :

No SVHC

Factory Lead Time :

17 Weeks

Current Rating :

120mA

Width :

2.41mm

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

30 Ω @ 100mA, 5V

Contact Plating :

Tin

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Height :

4.01mm

Packaging :

Bulk

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Number of Terminations :

3

Number of Channels :

1

ECCN Code :

EAR99

Published :

2012

Resistance :

23Ohm

Number of Elements :

1