BS107G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

250mA

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

350mW

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Terminal Position :

BOTTOM

Drive Voltage (Max Rds On,Min Rds On) :

2.6V 10V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

Published :

2007

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Vgs (Max) :

±20V

Voltage - Rated DC :

200V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Transistor Element Material :

SILICON

Packaging :

Bulk

Current - Continuous Drain (Id) @ 25°C :

250mA Ta

FET Type :

N-Channel

Power Dissipation-Max :

350mW Ta

Mount :

Through Hole

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 1mA

Qualification Status :

Not Qualified

Threshold Voltage :

3V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.25A

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

14 Ω @ 200mA, 10V

Current Rating :

250mA

Lead Free :

Lead Free

Number of Pins :

3

Contact Plating :

Copper, Silver, Tin

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

200V