BS107G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

250mA

Mount :

Through Hole

Vgs(th) (Max) @ Id :

3V @ 1mA

Number of Terminations :

3

Element Configuration :

Single

Contact Plating :

Copper, Silver, Tin

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

2.6V 10V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

FET Type :

N-Channel

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.25A

Continuous Drain Current (ID) :

250mA

Power Dissipation-Max :

350mW Ta

JESD-609 Code :

e1

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

200V

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Rds On (Max) @ Id, Vgs :

14 Ω @ 200mA, 10V

Pin Count :

3

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Threshold Voltage :

3V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

250mA Ta

Lead Free :

Lead Free

Terminal Position :

BOTTOM

Voltage - Rated DC :

200V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Mounting Type :

Through Hole

Published :

2007

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

350mW