BS107ARL1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 1mA

Element Configuration :

Single

Continuous Drain Current (ID) :

250mA

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

0.25A

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Length :

5.2mm

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Pin Count :

3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Surface Mount :

No

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

6 ns

Packaging :

Cut Tape (CT)

Number of Elements :

1

Weight :

4.535924g

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Element Material :

SILICON

Power Dissipation :

350mW

Vgs (Max) :

±20V

Turn-Off Delay Time :

12 ns

Resistance :

6.4Ohm

Nominal Vgs :

3 V

Threshold Voltage :

3V

Current Rating :

250mA

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Width :

4.19mm

Current - Continuous Drain (Id) @ 25°C :

250mA Ta

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Voltage - Rated DC :

200V

Rds On (Max) @ Id, Vgs :

6.4 Ω @ 250mA, 10V

Terminal Position :

BOTTOM

Power Dissipation-Max :

350mW Ta

Number of Terminations :

3

JESD-609 Code :

e1

Contact Plating :

Copper, Silver, Tin

Height :

5.33mm

Published :

2007

Drain to Source Breakdown Voltage :

200V