BR93H86RF-WCE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Terminal Position :

Dual

Clock Frequency :

1.25MHz

Voltage - Supply :

2.7V~5.5V

Width :

4.4mm

Factory Lead Time :

12 Weeks

Organization :

1KX16

Supply Current-Max :

0.0015mA

Power Supplies :

2/5V

Height Seated (Max) :

1.71mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Standby Current-Max :

0.000002A

Memory Type :

Non-Volatile

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Memory Size :

16Kb 1K x 16

Number of Terminations :

8

Supply Voltage-Min (Vsup) :

2.7V

Packaging :

Cut Tape (CT)

Series :

Automotive, AEC-Q100

Memory Density :

16384 bit

Write Protection :

SOFTWARE

Supply Voltage-Max (Vsup) :

5.5V

JESD-30 Code :

R-PDSO-G8

Memory Width :

16

Qualification Status :

Not Qualified

Write Cycle Time-Max (tWC) :

10ms

Mounting Type :

Surface Mount

Terminal Pitch :

1.27mm

Package / Case :

8-SOIC (0.173, 4.40mm Width)

Data Retention Time-Min :

40

Operating Mode :

SYNCHRONOUS

Operating Temperature :

-40°C~125°C TA

Memory Format :

EEPROM

Number of Functions :

1

Serial Bus Type :

3-WIRE

Supply Voltage :

4V

Memory Interface :

SPI

Write Cycle Time - Word, Page :

5ms

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

5mm

Parallel/Serial :

Serial

Endurance :

1000000 Write/Erase Cycles