BR93A66RFJ-WME2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Access Time :

200 ns

Additional Feature :

SEATED HT-CALCULATED

Memory Interface :

SPI

Memory Format :

EEPROM

Density :

4 kb

Mounting Type :

Surface Mount

Write Cycle Time - Word, Page :

5ms

Power Supplies :

3/5V

Supply Voltage-Max (Vsup) :

5.5V

Voltage - Supply :

2.5V~5.5V

Data Retention Time-Min :

40

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

3.9mm

Supply Current-Max :

0.0045mA

Length :

4.9mm

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Factory Lead Time :

11 Weeks

Number of Terminations :

8

Published :

2009

Interface :

Serial

Operating Mode :

SYNCHRONOUS

Screening Level :

AEC-Q100

Memory Size :

4Kb 256 x 16

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supply Voltage-Min (Vsup) :

2.5V

Terminal Position :

Dual

Base Part Number :

BR93A66

Number of Functions :

1

Mount :

Surface Mount

Write Cycle Time-Max (tWC) :

5ms

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supply Voltage :

4V

Height Seated (Max) :

1.65mm

Organization :

256X16

JESD-30 Code :

R-PDSO-G8

Endurance :

1000000 Write/Erase Cycles

Memory Type :

Non-Volatile

Serial Bus Type :

3-WIRE

Operating Temperature :

-40°C~105°C TA

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Write Protection :

SOFTWARE

Clock Frequency :

2MHz

Standby Current-Max :

0.000002A

Memory Width :

16

Terminal Pitch :

1.27mm