BR93H66RFJ-WCE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Supply Voltage :

4V

Memory Type :

Non-Volatile

Memory Format :

EEPROM

Operating Mode :

SYNCHRONOUS

Published :

2013

JESD-30 Code :

R-PDSO-G8

Number of Functions :

1

Memory Density :

4096 bit

Number of Terminations :

8

Supply Voltage-Max (Vsup) :

5.5V

Height Seated (Max) :

1.65mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Clock Frequency :

1.25MHz

Length :

4.9mm

Endurance :

1000000 Write/Erase Cycles

Operating Temperature :

-40°C~125°C TA

Qualification Status :

Not Qualified

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3.9mm

Write Cycle Time - Word, Page :

5ms

Terminal Pitch :

1.27mm

Write Protection :

SOFTWARE

Memory Width :

16

Supply Voltage-Min (Vsup) :

2.7V

Supply Current-Max :

0.0015mA

Factory Lead Time :

12 Weeks

Organization :

256X16

Packaging :

Cut Tape (CT)

Parallel/Serial :

Serial

Mounting Type :

Surface Mount

Write Cycle Time-Max (tWC) :

10ms

Terminal Position :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Serial Bus Type :

3-WIRE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Supply :

2.7V~5.5V

Memory Interface :

SPI

Standby Current-Max :

0.000002A

Memory Size :

4Kb 256 x 16

RoHS Status :

ROHS3 Compliant

Additional Feature :

SEATED HT-CALCULATED

Series :

Automotive, AEC-Q100

Data Retention Time-Min :

40

Power Supplies :

2/5V