BR93G46FVT-3GE2

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Mfr.Part #
BR93G46FVT-3GE2
Manufacturer
ROHM Semiconductor
Package / Case
8-TSSOP (0.173, 4.40mm Width)
Datasheet
Download
Description
IC EEPROM 1KBIT SPI 3MHZ 8TSSOPB
Stock
80
In Stock :
80

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Manufacturer :
ROHM Semiconductor
Product Category :
Memory
Number of Terminations :
8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Functions :
1
Memory Interface :
SPI
Length :
4.4mm
Clock Frequency :
3MHz
Memory Type :
Non-Volatile
Parallel/Serial :
Serial
Factory Lead Time :
10 Weeks
Memory Density :
1024 bit
Supply Voltage-Min (Vsup) :
4.5V
Mounting Type :
Surface Mount
Package / Case :
8-TSSOP (0.173, 4.40mm Width)
Additional Feature :
IT ALSO OPERATES AT 1MHZ AT 1.7 MIN
Write Cycle Time - Word, Page :
5ms
JESD-30 Code :
R-PDSO-G8
Terminal Position :
Dual
Height Seated (Max) :
1.2mm
Operating Temperature :
-40°C~85°C TA
RoHS Status :
ROHS3 Compliant
Packaging :
Cut Tape (CT)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
SYNCHRONOUS
Terminal Finish :
Tin (Sn)
Organization :
64X16
JESD-609 Code :
e3
Terminal Pitch :
0.65mm
Memory Size :
1Kb 64 x 16
Memory Format :
EEPROM
Voltage - Supply :
1.7V~5.5V
Serial Bus Type :
3-WIRE
Supply Voltage :
5V
Memory Width :
16
Width :
3mm
Surface Mount :
yes
Supply Voltage-Max (Vsup) :
5.5V
Write Cycle Time-Max (tWC) :
5ms
Alternate Memory Width :
8
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
BR93G46FVT-3GE2
Introducing Memory ROHM Semiconductor BR93G46FVT-3GE2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Mounting Type:Surface Mount, Package / Case:8-TSSOP (0.173, 4.40mm Width), Operating Temperature:-40°C~85°C TA, BR93G46FVT-3GE2 pinout, BR93G46FVT-3GE2 datasheet PDF, BR93G46FVT-3GE2 amp .Beyond Memory ROHM Semiconductor BR93G46FVT-3GE2 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor BR93G46FVT-3GE2


Memory ROHM Semiconductor BR93G46FVT-3GE2 Overview

Introducing the BR93G46FVT-3GE2, an exceptional EEPROM integrated circuit meticulously crafted by ROHM Semiconductor. This cutting-edge memory solution epitomizes innovation, reliability, and efficiency, setting new benchmarks in the realm of electronic storage devices.

With a capacity of 1KBIT and utilizing the Serial Peripheral Interface (SPI) protocol at a remarkable speed of 3MHz, the BR93G46FVT-3GE2 offers unparalleled performance in a compact 8TSSOPB package. Whether it's data logging, configuration storage, or parameter settings, this EEPROM is engineered to meet the diverse needs of modern electronic applications.

Experience the epitome of memory technology with the BR93G46FVT-3GE2, where precision meets performance, and reliability meets innovation.

BR93G46FVT-3GE2 Features

  • 1KBIT EEPROM: Provides ample storage capacity for various data storage needs.
  • SPI Interface: Facilitates high-speed data transfer up to 3MHz, ensuring rapid access to stored information.
  • Compact 8TSSOPB Package: Enables easy integration into space-constrained electronic designs.
  • Wide Operating Voltage Range: Supports versatile voltage requirements, enhancing compatibility across different systems.
  • High Reliability: ROHM Semiconductor's stringent quality control measures ensure consistent performance and durability.
  • Low Power Consumption: Optimized power management prolongs battery life and reduces overall energy consumption.

BR93G46FVT-3GE2 Applications

  • Data Logging Systems: The BR93G46FVT-3GE2 is ideal for storing logged data in applications such as automotive diagnostics, environmental monitoring, and industrial automation.
  • Embedded Systems: Utilize the EEPROM for storing configuration settings, calibration data, and firmware updates in microcontroller-based systems, IoT devices, and consumer electronics.
  • Smart Sensors: Enhance the functionality of sensors by storing calibration parameters, threshold values, and device-specific configurations, ensuring precise and reliable operation in various sensing applications.
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