BMS3004-1E
- Mfr.Part #
- BMS3004-1E
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET P-CH 75V 68A TO220F-3SG
- Stock
- 5,259
- In Stock :
- 5,259
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 21 Weeks
- Packaging :
- Tube
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- JEDEC-95 Code :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- -75V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 68A Ta
- Case Connection :
- Isolated
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Weight :
- 6.000006g
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 70 ns
- Turn-Off Delay Time :
- 1.4 μs
- Number of Pins :
- 3
- Element Configuration :
- Single
- FET Type :
- P-Channel
- Surface Mount :
- No
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 34A, 10V
- Power Dissipation-Max :
- 2W Ta 40W Tc
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 650 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 13400pF @ 20V
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Number of Channels :
- 1
- Reach Compliance Code :
- not_compliant
- Published :
- 2013
- Rise Time :
- 245ns
- Pulsed Drain Current-Max (IDM) :
- 272A
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 75V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Package / Case :
- TO-220-3 Full Pack
- Continuous Drain Current (ID) :
- 68A
- Datasheets
- BMS3004-1E
BMS3004-1E Documents
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P-Channel Tube 8.5m Ω @ 34A, 10V ±20V 13400pF @ 20V 300nC @ 10V 75V TO-220-3 Full Pack
BMS3004-1E Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 13400pF @ 20V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -75V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -75V.As a result of its turn-off delay time, which is 1.4 μs, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 272A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 70 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 75V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4V 10V).
BMS3004-1E Features
a continuous drain current (ID) of 68A
a drain-to-source breakdown voltage of -75V voltage
the turn-off delay time is 1.4 μs
based on its rated peak drain current 272A.
a 75V drain to source voltage (Vdss)
BMS3004-1E Applications
There are a lot of ON Semiconductor
BMS3004-1E applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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