BMS3004-1E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

1.4 μs

Case Connection :

Isolated

Turn On Delay Time :

70 ns

Gate to Source Voltage (Vgs) :

20V

Weight :

6.000006g

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 34A, 10V

Published :

2013

Number of Terminations :

3

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Vgs (Max) :

±20V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Reach Compliance Code :

not_compliant

Lead Free :

Lead Free

Number of Channels :

1

Continuous Drain Current (ID) :

68A

Current - Continuous Drain (Id) @ 25°C :

68A Ta

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

272A

Input Capacitance (Ciss) (Max) @ Vds :

13400pF @ 20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Pin Count :

3

Drain to Source Voltage (Vdss) :

75V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

21 Weeks

JESD-609 Code :

e3

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Rise Time :

245ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Contact Plating :

Tin

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Packaging :

Tube

Drain to Source Breakdown Voltage :

-75V

Transistor Element Material :

SILICON

Number of Pins :

3

Fall Time (Typ) :

650 ns

Power Dissipation-Max :

2W Ta 40W Tc

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE