BLS6G3135-20,112

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Transistor Type :

LDMOS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature (Max) :

225°C

Gain :

15.5dB

Packaging :

Tray

Factory Lead Time :

13 Weeks

Number of Elements :

1

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Terminal Form :

Flat

Current - Test :

50mA

Frequency :

3.1GHz~3.5GHz

Case Connection :

SOURCE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

S-CDFM-F2

DS Breakdown Voltage-Min :

60V

Voltage - Test :

32V

Transistor Application :

AMPLIFIER

Configuration :

Single

Power - Output :

20W

Terminal Position :

Dual

Voltage - Rated :

60V

Base Part Number :

BLS6G3135

Published :

2009

Reference Standard :

IEC-60134

Number of Terminations :

2

Package / Case :

SOT-608A

Current Rating (Amps) :

2.1A

Drain Current-Max (Abs) (ID) :

2.1A

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON