BLS6G3135S-20,112

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Voltage - Test :

32V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

LDMOS

Power - Output :

20W

Reference Standard :

IEC-60134

JESD-30 Code :

S-CDFP-F2

Factory Lead Time :

13 Weeks

Drain Current-Max (Abs) (ID) :

2.1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated :

60V

Configuration :

Single

Number of Elements :

1

DS Breakdown Voltage-Min :

60V

Base Part Number :

BLS6G3135

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Published :

2009

Current - Test :

50mA

Gain :

15.5dB

Terminal Position :

Dual

Terminal Form :

Flat

Case Connection :

SOURCE

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current Rating (Amps) :

2.1A

Surface Mount :

yes

ECCN Code :

EAR99

Package / Case :

SOT-608B

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tray

Frequency :

3.1GHz~3.5GHz

Transistor Application :

AMPLIFIER