BLF7G10LS-250

Manufacturer :

Ampleon

Product Category :

Transistors - FETs, MOSFETs - RF

Package Shape :

RECTANGULAR

RoHS Status :

RoHS Compliant

Maximum Continuous Drain Current (A) :

56

Output Power (W) :

60(Typ)

Qualification Status :

Not Qualified

Maximum Drain Source Voltage (V) :

65

JESD-30 Code :

R-CDFP-F2

Pin Count :

3

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

SOURCE

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

65 V

Mode of Operation :

2-Carrier W-CDMA

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package Length :

20.7(Max)

ECCN Code :

EAR99

Package Width :

9.91(Max)

Package Height :

4.72(Max)

Number of Terminals :

2

Terminal Form :

Flat

Typical Forward Transconductance (S) :

22

Maximum Drain Source Resistance (mOhm) :

57(Typ)@6.05V

Maximum Operating Temperature (°C) :

200

Military :

No

Maximum Frequency (MHz) :

960

Highest Frequency Band :

ULTRA HIGH FREQUENCY BAND

Process Technology :

LDMOS

Channel Type :

N

Configuration :

Single

ECCN (US) :

EAR99

Typical Drain Efficiency (%) :

30.5

Polarity/Channel Type :

N-Channel

Maximum Gate Source Voltage (V) :

13

Typical Power Gain (dB) :

19.5

Minimum Operating Temperature (°C) :

-65

PCB changed :

3

Supplier Package :

SOT-502B

Minimum Frequency (MHz) :

869

Maximum VSWR :

10

Transistor Element Material :

SILICON

Channel Mode :

Enhancement

Number of Elements per Chip :

1

Transistor Application :

AMPLIFIER

Reach Compliance Code :

Unknown

Mounting :

Surface Mount

Manufacturer :

NXP Semiconductors

Number of Elements :

1