BF1005SE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - RF

Surface Mount :

yes

Configuration :

Single

Drain Current-Max (Abs) (ID) :

0.025 A

Voltage - Rated :

8 V

Noise Figure :

1.6 dB

Lead Free :

Lead Free

Height :

1 mm

Width :

1.3 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS :

Compliant

Product Status :

Active

Frequency :

800 MHz

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Input Capacitance :

2.5 pF

Max Operating Temperature :

150 °C

Voltage Rating (DC) :

8 V

Output Power :

200 mW

Gain :

22 dB

Continuous Drain Current (ID) :

25 mA

Gate to Source Voltage (Vgs) :

3 V

ECCN Code :

EAR99

Package :

Bulk

Length :

2.9 mm

Test Voltage :

5 V

Voltage - Test :

5 V

Manufacturer :

Infineon Technologies AG

Current Rating :

25 mA

Transistor Type :

N-Channel

Mount :

Surface Mount

Power - Output :

-

Channel Type :

N

Drain to Source Voltage (Vdss) :

8 V

Package / Case :

TO-253-4, TO-253AA

Current Rating (Amps) :

800μA

Power Dissipation-Max (Abs) :

0.2 W

Continuous Drain Current Id :

0.025

Series :

-

Voltage Rating :

8 V

Supplier Device Package :

SOT143 (SC-61)

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

200 mW

Number of Pins :

4

Reach Compliance Code :

Unknown

Subcategory :

FET General Purpose Power

Min Operating Temperature :

-55 °C