BD438
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- Mfr.Part #
- BD438
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 4A TO126
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Case Connection :
- Isolated
- Max Power Dissipation :
- 36W
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Height :
- 10.8mm
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Width :
- 2.7mm
- Collector Emitter Saturation Voltage :
- 200mV
- Power Dissipation :
- 36W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100μA
- Frequency :
- 3MHz
- Transition Frequency :
- 3MHz
- Packaging :
- Tube
- Max Breakdown Voltage :
- 45V
- Collector Base Voltage (VCBO) :
- 45V
- JESD-609 Code :
- e3
- Length :
- 7.8mm
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 45V
- Package / Case :
- TO-225AA, TO-126-3
- Gain Bandwidth Product :
- 3MHz
- hFE Min :
- 30
- Max Collector Current :
- 4A
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Base Part Number :
- BD438
- VCEsat-Max :
- 0.6 V
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Datasheets
- BD438
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PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD438 Overview
In this device, the DC current gain is 30 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.3MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
BD438 Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD438 Applications
There are a lot of STMicroelectronics
BD438 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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