BD438
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- Mfr.Part #
- BD438
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 4A TO126
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 100μA
- Transition Frequency :
- 3MHz
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Max Collector Current :
- 4A
- Max Power Dissipation :
- 36W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 45V
- Packaging :
- Tube
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Frequency :
- 3MHz
- VCEsat-Max :
- 0.6 V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Collector Base Voltage (VCBO) :
- 45V
- hFE Min :
- 30
- Case Connection :
- Isolated
- Height :
- 10.8mm
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 36W
- Transistor Type :
- PNP
- Length :
- 7.8mm
- Collector Emitter Saturation Voltage :
- 200mV
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Width :
- 2.7mm
- Lead Free :
- Lead Free
- Package / Case :
- TO-225AA, TO-126-3
- Base Part Number :
- BD438
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 8 Weeks
- Datasheets
- BD438
BD438 Documents
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PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD438 Overview
In this device, the DC current gain is 30 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.3MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
BD438 Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD438 Applications
There are a lot of STMicroelectronics
BD438 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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