BD239BTU

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Mfr.Part #
BD239BTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 80V 2A TO220-3
Stock
875
In Stock :
875

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Weight :
1.8g
JESD-609 Code :
e3
Pbfree Code :
yes
Max Power Dissipation :
30W
Contact Plating :
Tin
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
2 Weeks
Number of Pins :
3
Qualification Status :
Not Qualified
Max Collector Current :
2A
hFE Min :
15
Package / Case :
TO-220-3
Length :
9.9mm
Number of Terminations :
3
Voltage - Rated DC :
80V
Published :
2000
Emitter Base Voltage (VEBO) :
5V
Collector Base Voltage (VCBO) :
80V
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 1A 4V
Current - Collector Cutoff (Max) :
300μA
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Current Rating :
2A
Width :
4.5mm
Operating Temperature :
150°C TJ
Mount :
Through Hole
Transistor Type :
NPN
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
700mV @ 200mA, 1A
RoHS Status :
RoHS Compliant
Power Dissipation :
30W
Collector Emitter Breakdown Voltage :
80V
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-220AB
Polarity/Channel Type :
NPN
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
700mV
Height :
15.7mm
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
ECCN Code :
EAR99
Packaging :
Tube
Base Part Number :
BD239
Collector Emitter Voltage (VCEO) :
90V
Datasheets
BD239BTU
Introducing Transistors - Bipolar (BJT) - Single onsemi BD239BTU from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Base Part Number:BD239, BD239BTU pinout, BD239BTU datasheet PDF, BD239BTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD239BTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD239BTU


NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD239BTU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.A maximum collector current of 2A volts can be achieved.

BD239BTU Features


the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A


BD239BTU Applications


There are a lot of ON Semiconductor
BD239BTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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