BD239BTU
- Mfr.Part #
- BD239BTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 2A TO220-3
- Stock
- 875
- In Stock :
- 875
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 1.8g
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Max Power Dissipation :
- 30W
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 2 Weeks
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 2A
- hFE Min :
- 15
- Package / Case :
- TO-220-3
- Length :
- 9.9mm
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 80V
- Published :
- 2000
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Current - Collector Cutoff (Max) :
- 300μA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Current Rating :
- 2A
- Width :
- 4.5mm
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 30W
- Collector Emitter Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 700mV
- Height :
- 15.7mm
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Base Part Number :
- BD239
- Collector Emitter Voltage (VCEO) :
- 90V
- Datasheets
- BD239BTU

NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD239BTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.A maximum collector current of 2A volts can be achieved.
BD239BTU Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
BD239BTU Applications
There are a lot of ON Semiconductor
BD239BTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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