BD239ATU
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- Mfr.Part #
- BD239ATU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A TO220-3
- Stock
- 10,372
- In Stock ：
- 10,372
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 30W
- Max Power Dissipation :
- 30W
- Weight :
- 1.8g
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 700mV
- Voltage - Rated DC :
- 60V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 70V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2000
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 6 Weeks
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Transistor Type :
- NPN
- Base Part Number :
- BD239
- Transition Frequency :
- 3MHz
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 2A
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- TO-220-3
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- 60V
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 300μA
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- hFE Min :
- 15
- Pbfree Code :
- yes
- Current Rating :
- 2A
- Datasheets
- BD239ATU
NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD239ATU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 1A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 2A volts.
BD239ATU Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz
BD239ATU Applications
There are a lot of ON Semiconductor
BD239ATU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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