BD238G

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Mfr.Part #
BD238G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 80V 2A TO126
Stock
5,145
In Stock :
5,145

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 day ago)
Collector Emitter Voltage (VCEO) :
80V
Published :
2003
Moisture Sensitivity Level (MSL) :
Not Applicable
Transistor Application :
AMPLIFIER
JESD-609 Code :
e3
Package / Case :
TO-225AA, TO-126-3
Emitter Base Voltage (VEBO) :
5V
Time@Peak Reflow Temperature-Max (s) :
40
Lead Free :
Lead Free
Number of Terminations :
3
Gain Bandwidth Product :
3MHz
Collector Base Voltage (VCBO) :
100V
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Frequency :
3MHz
Polarity/Channel Type :
PNP
Collector Emitter Saturation Voltage :
600mV
Peak Reflow Temperature (Cel) :
260
ECCN Code :
EAR99
Power Dissipation :
25W
Packaging :
Bulk
Terminal Finish :
Tin (Sn)
Transistor Type :
PNP
Surface Mount :
No
Number of Elements :
1
hFE Min :
40
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Element Configuration :
Single
Pbfree Code :
yes
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
Current - Collector Cutoff (Max) :
100μA ICBO
Max Power Dissipation :
25W
Pin Count :
3
Transition Frequency :
3MHz
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
RoHS Status :
ROHS3 Compliant
Max Collector Current :
2A
Introducing Transistors - Bipolar (BJT) - Single onsemi BD238G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, BD238G pinout, BD238G datasheet PDF, BD238G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD238G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD238G


PNP -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD238G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 2A volts.

BD238G Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz


BD238G Applications


There are a lot of ON Semiconductor
BD238G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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