BD238G
- Mfr.Part #
- BD238G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 2A TO126
- Stock
- 5,145
- In Stock :
- 5,145
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Pin Count :
- 3
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Collector Emitter Saturation Voltage :
- 600mV
- Polarity/Channel Type :
- PNP
- Transistor Application :
- AMPLIFIER
- Published :
- 2003
- hFE Min :
- 40
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 3MHz
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-225AA, TO-126-3
- Power Dissipation :
- 25W
- Max Collector Current :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 100V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Max Power Dissipation :
- 25W
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Frequency :
- 3MHz
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Collector Emitter Voltage (VCEO) :
- 80V
- Datasheets
- BD238G
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PNP -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD238G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 2A volts.
BD238G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD238G Applications
There are a lot of ON Semiconductor
BD238G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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