BD238G

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Mfr.Part #
BD238G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 80V 2A TO126
Stock
5,145
In Stock :
5,145

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Packaging :
Bulk
Pin Count :
3
Element Configuration :
Single
Lead Free :
Lead Free
JESD-609 Code :
e3
Gain Bandwidth Product :
3MHz
Emitter Base Voltage (VEBO) :
5V
Peak Reflow Temperature (Cel) :
260
Pbfree Code :
yes
Number of Terminations :
3
Qualification Status :
Not Qualified
Collector Emitter Saturation Voltage :
600mV
Polarity/Channel Type :
PNP
Transistor Application :
AMPLIFIER
Published :
2003
hFE Min :
40
Time@Peak Reflow Temperature-Max (s) :
40
Transition Frequency :
3MHz
Terminal Finish :
Tin (Sn)
Transistor Element Material :
SILICON
Package / Case :
TO-225AA, TO-126-3
Power Dissipation :
25W
Max Collector Current :
2A
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
Number of Elements :
1
Collector Base Voltage (VCBO) :
100V
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Max Power Dissipation :
25W
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
Frequency :
3MHz
Transistor Type :
PNP
Moisture Sensitivity Level (MSL) :
Not Applicable
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 day ago)
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Current - Collector Cutoff (Max) :
100μA ICBO
Collector Emitter Voltage (VCEO) :
80V
Datasheets
BD238G
Introducing Transistors - Bipolar (BJT) - Single onsemi BD238G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, BD238G pinout, BD238G datasheet PDF, BD238G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD238G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD238G


PNP -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD238G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 2A volts.

BD238G Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz


BD238G Applications


There are a lot of ON Semiconductor
BD238G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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