BCX5516H6327XTSA1
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- Mfr.Part #
- BCX5516H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT89
- Stock
- 5,600
- In Stock ：
- 5,600
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Factory Lead Time :
- 12 Weeks
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Published :
- 2008
- Transition Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 60V
- Length :
- 4.5mm
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector (Ic) (Max) :
- 1A
- Package / Case :
- TO-243AA
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 1A
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Height :
- 1.6mm
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Power Dissipation :
- 2W
- Width :
- 2.5mm
- Series :
- Automotive, AEC-Q101
- Max Power Dissipation :
- 2W
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Datasheets
- BCX5516H6327XTSA1
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX5516H6327XTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
BCX5516H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCX5516H6327XTSA1 Applications
There are a lot of Infineon Technologies
BCX5516H6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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