BCX5316H6327XTSA1

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Mfr.Part #
BCX5316H6327XTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 80V 1A SOT89
Stock
2,335
In Stock :
2,335

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Contact Plating :
Tin
Voltage :
80V
Collector Base Voltage (VCBO) :
100V
Current :
1A
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
PNP
Transistor Type :
PNP
Factory Lead Time :
4 Weeks
Frequency :
125MHz
Max Power Dissipation :
2W
Max Breakdown Voltage :
80V
Power Dissipation :
1W
Number of Elements :
1
Emitter Base Voltage (VEBO) :
5V
Mount :
Surface Mount
Max Collector Current :
1A
Packaging :
Tape and Reel (TR)
Operating Temperature :
150°C TJ
Package / Case :
TO-243AA
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Collector Emitter Voltage (VCEO) :
-80V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Series :
Automotive, AEC-Q101
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
100nA ICBO
Published :
2001
Collector Emitter Breakdown Voltage :
80V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
Single
Number of Pins :
3
ECCN Code :
EAR99
Datasheets
BCX5316H6327XTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BCX5316H6327XTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Voltage:80V, Operating Temperature:150°C TJ, Package / Case:TO-243AA, Mounting Type:Surface Mount, Number of Pins:3, BCX5316H6327XTSA1 pinout, BCX5316H6327XTSA1 datasheet PDF, BCX5316H6327XTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BCX5316H6327XTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCX5316H6327XTSA1


PNP 150°C TJ 100nA ICBO 1 Elements PNP TO-243AA Tape & Reel (TR) Surface Mount

BCX5316H6327XTSA1 Overview


In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

BCX5316H6327XTSA1 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V


BCX5316H6327XTSA1 Applications


There are a lot of Infineon Technologies
BCX5316H6327XTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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