BCX5316E6433HTMA1
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- Mfr.Part #
- BCX5316E6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT89
- Stock
- 11,645
- In Stock ：
- 11,645
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 2W
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Current - Collector (Ic) (Max) :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-243AA
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 125MHz
- RoHS Status :
- RoHS Compliant
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 80V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Base Part Number :
- BCX53
- Published :
- 2008
- Max Collector Current :
- 1A
- Case Connection :
- COLLECTOR
- JESD-30 Code :
- R-PSSO-F3
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 4
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 2W
- Frequency :
- 125MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- Terminal Form :
- Flat
- Datasheets
- BCX5316E6433HTMA1
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
BCX5316E6433HTMA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 125MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCX5316E6433HTMA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz
BCX5316E6433HTMA1 Applications
There are a lot of Infineon Technologies
BCX5316E6433HTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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