BCX5310H6327XTSA1
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- Mfr.Part #
- BCX5310H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT89
- Stock
- 2,627
- In Stock ：
- 2,627
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 80V
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-243AA
- Radiation Hardening :
- No
- Max Power Dissipation :
- 2W
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Flat
- Collector Emitter Voltage (VCEO) :
- 80V
- Power Dissipation :
- 2W
- Series :
- Automotive, AEC-Q101
- Collector Emitter Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- Published :
- 2011
- Operating Temperature :
- 150°C TJ
- Case Connection :
- COLLECTOR
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Number of Pins :
- 3
- Transition Frequency :
- 125MHz
- Configuration :
- Single
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Max Collector Current :
- 1A
- Frequency :
- 125MHz
- Datasheets
- BCX5310H6327XTSA1
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
BCX5310H6327XTSA1 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCX5310H6327XTSA1 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz
BCX5310H6327XTSA1 Applications
There are a lot of Infineon Technologies
BCX5310H6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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