BC859CW135
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- Mfr.Part #
- BC859CW135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC859CW - SMALL SIG
- Stock
- 60,000
- In Stock ：
- 60,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Max Power Dissipation :
- 200mW
- Collector Base Voltage (VCBO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Pins :
- 3
- Collector-Base Capacitance-Max :
- 5pF
- Power Dissipation :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- Base Part Number :
- BC859
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- SC-70, SOT-323
- Gain Bandwidth Product :
- 100MHz
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BC859CW135
Specialized ICs NXP Semiconductors BC859CW135 Overview
The Specialized ICs NXP Semiconductors BC859CW135 is a high-performance PNP transistor that offers reliable operation up to 150°C junction temperature. This component is designed with a collector-base leakage current of just 15nA and incorporates a single transistor configuration with three terminations in a compact SC-70, SOT-323 package. This design supports surface mounting, making it suitable for high-density PCB layouts. Manufactured by NXP Semiconductors, this device ensures high efficiency and stability across a wide range of applications thanks to its technical specifications which include a VCE saturation of 650mV at 5mA and 100mA, a high transition frequency of 100MHz, and a maximum collector current of 100mA. Its robust design and packaging for tape and reel make it ideal for automated assembly processes, ensuring reliability and consistency in mass production settings.
Specialized ICs NXP Semiconductors BC859CW135 Key Features
The key features of the Specialized ICs NXP Semiconductors BC859CW135 include:
- High DC current gain of 420 at 2mA, 5V
- Low collector-emitter saturation voltage of 650mV at conditions of 5mA and 100mA
- Stable emitter-base voltage maintained at 5V
- High transition frequency of 100MHz
- Robust thermal performance with a maximum operating temperature of 150°C
Specialized ICs NXP Semiconductors BC859CW135 Applications
The Specialized ICs NXP Semiconductors BC859CW135 is versatile for various applications, particularly suitable for:
- Inverter circuits
- Interface applications between different voltage and power domains
- Driver modules for low-power devices
- Muting control in audio and signal processing equipment
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