BC859CW135
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- Mfr.Part #
- BC859CW135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC859CW - SMALL SIG
- Stock
- 60,000
- In Stock ：
- 60,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 200mW
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Published :
- 2009
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Power Dissipation :
- 200mW
- Radiation Hardening :
- No
- Series :
- Automotive, AEC-Q101
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BC859
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Frequency :
- 100MHz
- Terminal Position :
- Dual
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Package / Case :
- SC-70, SOT-323
- Mount :
- Surface Mount
- Collector-Base Capacitance-Max :
- 5pF
- Collector Emitter Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Datasheets
- BC859CW135
BC859CW135 Documents
Specialized ICs NXP Semiconductors BC859CW135 Overview
The Specialized ICs NXP Semiconductors BC859CW135 is a high-performance PNP transistor that offers reliable operation up to 150°C junction temperature. This component is designed with a collector-base leakage current of just 15nA and incorporates a single transistor configuration with three terminations in a compact SC-70, SOT-323 package. This design supports surface mounting, making it suitable for high-density PCB layouts. Manufactured by NXP Semiconductors, this device ensures high efficiency and stability across a wide range of applications thanks to its technical specifications which include a VCE saturation of 650mV at 5mA and 100mA, a high transition frequency of 100MHz, and a maximum collector current of 100mA. Its robust design and packaging for tape and reel make it ideal for automated assembly processes, ensuring reliability and consistency in mass production settings.
Specialized ICs NXP Semiconductors BC859CW135 Key Features
The key features of the Specialized ICs NXP Semiconductors BC859CW135 include:
- High DC current gain of 420 at 2mA, 5V
- Low collector-emitter saturation voltage of 650mV at conditions of 5mA and 100mA
- Stable emitter-base voltage maintained at 5V
- High transition frequency of 100MHz
- Robust thermal performance with a maximum operating temperature of 150°C
Specialized ICs NXP Semiconductors BC859CW135 Applications
The Specialized ICs NXP Semiconductors BC859CW135 is versatile for various applications, particularly suitable for:
- Inverter circuits
- Interface applications between different voltage and power domains
- Driver modules for low-power devices
- Muting control in audio and signal processing equipment
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