BC859BW115
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- Mfr.Part #
- BC859BW115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC859BW SMALL SIGNA
- Stock
- 14,037
- In Stock ：
- 14,037
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Max Collector Current :
- 100mA
- Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Base Part Number :
- BC859
- Max Power Dissipation :
- 200mW
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 30V
- Published :
- 2009
- Series :
- Automotive, AEC-Q101
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- hFE Min :
- 220
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Package / Case :
- SC-70, SOT-323
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- LOW NOISE
- Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Gain Bandwidth Product :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Collector-Base Capacitance-Max :
- 5pF
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Datasheets
- BC859BW115
Specialized ICs NXP Semiconductors BC859BW,115 Overview
The Specialized ICs NXP Semiconductors BC859BW,115 is a high-performance PNP transistor designed for use in demanding applications where high efficiency and low power consumption are required. This component operates with a maximum junction temperature (TJ) of 150°C, showcasing its robustness in various thermal environments. The low collector-base leakage current (ICBO) of 15nA ensures minimal power loss, enhancing the overall efficiency of the device. Manufactured in the compact SC-70, SOT-323 package, this transistor is ideal for space-constrained applications, offering ease of integration in surface-mount technology (SMT) processes.
Key Features
DC current gain is 220 @ 2mA 5V, indicating a strong amplification capability.
VCE saturation (Max) of 650mV @ 5mA, 100mA, ensuring effective operation under high current conditions.
Emitter base voltage stability at 5V, optimizing the device for consistent performance.
Transition frequency of 100MHz, suitable for high-frequency applications.
Maximum collector current of 100mA, suitable for a variety of electronic circuits.
Applications
The Specialized ICs NXP Semiconductors BC859BW,115 is utilized in a wide range of applications, making it a versatile choice for electronic engineers and designers:
- Inverter circuits, where they are used to convert DC to AC power.
- Interface applications, acting as a crucial component in communication between various electronic systems.
- Driver modules, essential for controlling other electronic components or devices.
- Muting functions in audio and other signal-processing equipment.
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