BC858CE6327HTSA1
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- Mfr.Part #
- BC858CE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT-23
- Stock
- 44,349
- In Stock ：
- 44,349
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2004
- Base Part Number :
- BC858
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Voltage - Rated DC :
- -30V
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 30V
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 25 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Frequency :
- 250MHz
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Power Dissipation :
- 330mW
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Current Rating :
- -100mA
- Collector Emitter Voltage (VCEO) :
- 650mV
- Max Power Dissipation :
- 330mW
- Transition Frequency :
- 250MHz
- Configuration :
- Single
- Max Collector Current :
- 100mA
- Pbfree Code :
- yes
- Datasheets
- BC858CE6327HTSA1
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858CE6327HTSA1 Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC858CE6327HTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC858CE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC858CE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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