BC858AWT1G
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- Mfr.Part #
- BC858AWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SC70-3
- Stock
- 3,926
- In Stock ：
- 3,926
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- -30V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 30V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- Current Rating :
- -100mA
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2005
- Max Power Dissipation :
- 150mW
- Collector Emitter Saturation Voltage :
- -650mV
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-70, SOT-323
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Form :
- Gull wing
- hFE Min :
- 90
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Pin Count :
- 3
- Power Dissipation :
- 150mW
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Number of Elements :
- 1
- Factory Lead Time :
- 2 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Base Part Number :
- BC85**W
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Datasheets
- BC858AWT1G
BC858AWT1G Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC858AWT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC858AWT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858AWT1G Applications
There are a lot of ON Semiconductor
BC858AWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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