BC858AWT1G
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- Mfr.Part #
- BC858AWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SC70-3
- Stock
- 3,926
- In Stock ：
- 3,926
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -650mV
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Gain Bandwidth Product :
- 100MHz
- Polarity/Channel Type :
- PNP
- Base Part Number :
- BC85**W
- Terminal Form :
- Gull wing
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Package / Case :
- SC-70, SOT-323
- Number of Pins :
- 3
- Pin Count :
- 3
- Number of Elements :
- 1
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Published :
- 2005
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Base Voltage (VCBO) :
- 30V
- Frequency :
- 100MHz
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Surface Mount
- Current Rating :
- -100mA
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Voltage - Rated DC :
- -30V
- hFE Min :
- 90
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 150mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Power Dissipation :
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Terminal Position :
- Dual
- Datasheets
- BC858AWT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC858AWT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC858AWT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858AWT1G Applications
There are a lot of ON Semiconductor
BC858AWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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