BC857CLT1G
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- Mfr.Part #
- BC857CLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 412
- In Stock ：
- 412
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Power Dissipation :
- 300mW
- Max Collector Current :
- 100mA
- Length :
- 2.9mm
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Width :
- 1.3mm
- Collector Emitter Breakdown Voltage :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 45V
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Height :
- 940μm
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 7 Weeks
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 45V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- hFE Min :
- 420
- Surface Mount :
- yes
- Transition Frequency :
- 100MHz
- Current Rating :
- -100mA
- Voltage - Rated DC :
- -45V
- Packaging :
- Cut Tape (CT)
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -650mV
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Frequency :
- 100MHz
- Published :
- 2004
- Collector Base Voltage (VCBO) :
- 50V
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 300mW
- Datasheets
- BC857CLT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC857CLT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC857CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857CLT1G Applications
There are a lot of ON Semiconductor
BC857CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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