BC857C/DG/B4R

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Mfr.Part #
BC857C/DG/B4R
Manufacturer
Nexperia
Package / Case
4-SSIP Module
Datasheet
Download
Description
TRANS PNP 45V 0.1A TO236AB
Stock
27,746
In Stock :
27,746

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Accuracy :
-
Current - Sensing :
-
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
Frequency :
DC ~ 250kHz
Voltage - Supply :
4.5V ~ 5.5V
Output :
Ratiometric, Voltage
Product Status :
Active
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Mounting Type :
Through Hole
Frequency - Transition :
100MHz
Sensitivity :
10mV/mT
Operating Temperature :
-40°C ~ 150°C (TA)
Current - Collector Cutoff (Max) :
15nA (ICBO)
Voltage - Collector Emitter Breakdown (Max) :
45 V
Transistor Type :
PNP
Power - Max :
250 mW
Sensor Type :
Hall Effect
Package / Case :
4-SSIP Module
Base Product Number :
BC857
Linearity :
±0.2%
For Measuring :
DC
Response Time :
2μs
Polarization :
Bidirectional
DC Current Gain (hFE) (Min) @ Ic, Vce :
125 @ 2mA, 5V
Supplier Device Package :
TO-236AB
Current - Collector (Ic) (Max) :
100 mA
Series :
-
Current - Supply (Max) :
15mA
Number of Channels :
1
Datasheets
BC857C/DG/B4R
Introducing Transistors - Bipolar (BJT) - Single Nexperia BC857C/DG/B4R from Chip IC,where excellence meets affordability. This product stands out with its Output:Ratiometric, Voltage, Mounting Type:Through Hole, Operating Temperature:-40°C ~ 150°C (TA), Package / Case:4-SSIP Module, Number of Channels:1, BC857C/DG/B4R pinout, BC857C/DG/B4R datasheet PDF, BC857C/DG/B4R amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia BC857C/DG/B4R ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia BC857C/DG/B4R


PNP -40°C ~ 150°C (TA) 15nA (ICBO) 4-SSIP Module Through Hole

BC857C/DG/B4R Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 125 @ 2mA, 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.The product comes in the supplier device package of TO-236AB.A 45 V maximal voltage - Collector Emitter Breakdown is present in the device.

BC857C/DG/B4R Features


the DC current gain for this device is 125 @ 2mA, 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the supplier device package of TO-236AB


BC857C/DG/B4R Applications


There are a lot of Nexperia
BC857C/DG/B4R applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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