BC857BW,135
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- Mfr.Part #
- BC857BW,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR PNP 45V 100MA SOT323
- Stock
- 307,590
- In Stock ：
- 307,590
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Max Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Base Part Number :
- BC857
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Voltage :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Radiation Hardening :
- No
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Collector-Base Capacitance-Max :
- 5pF
- Terminal Position :
- Dual
- Package / Case :
- SC-70, SOT-323
- Current :
- 1A
- Collector Base Voltage (VCBO) :
- 50V
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Datasheets
- BC857BW,135
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857BW,135 Overview
DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC857BW,135 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857BW,135 Applications
There are a lot of Nexperia USA Inc.
BC857BW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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