BC857BTT1G
- Mfr.Part #
- BC857BTT1G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SC75 SOT416
- Stock
- 29,964
- In Stock :
- 29,964
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 45V
- Height :
- 900μm
- Package / Case :
- SC-75, SOT-416
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Power Dissipation :
- 300mW
- Power - Max :
- 200mW
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- hFE Min :
- 150
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Pin Count :
- 3
- Current Rating :
- -100mA
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Width :
- 900μm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -45V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- PNP
- Length :
- 1.65mm
- Max Power Dissipation :
- 200mW
- Transition Frequency :
- 100MHz
- Base Part Number :
- BC857*TT
- Published :
- 2009
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -650mV
- Datasheets
- BC857BTT1G

PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount
BC857BTT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC857BTT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BTT1G Applications
There are a lot of ON Semiconductor
BC857BTT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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