BC857BTT1G

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Mfr.Part #
BC857BTT1G
Manufacturer
onsemi
Package / Case
SC-75, SOT-416
Datasheet
Download
Description
TRANS PNP 45V 0.1A SC75 SOT416
Stock
29,964
In Stock :
29,964

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
50V
Packaging :
Tape and Reel (TR)
Max Breakdown Voltage :
45V
Height :
900μm
Package / Case :
SC-75, SOT-416
Emitter Base Voltage (VEBO) :
5V
Gain Bandwidth Product :
100MHz
Frequency :
100MHz
Power Dissipation :
300mW
Power - Max :
200mW
Number of Terminations :
3
Max Collector Current :
100mA
Time@Peak Reflow Temperature-Max (s) :
40
Current - Collector Cutoff (Max) :
15nA ICBO
Transistor Element Material :
SILICON
Transistor Type :
PNP
hFE Min :
150
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
8 Weeks
Pin Count :
3
Current Rating :
-100mA
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
260
Element Configuration :
Single
JESD-609 Code :
e3
Contact Plating :
Tin
Width :
900μm
DC Current Gain (hFE) (Min) @ Ic, Vce :
220 @ 2mA 5V
REACH SVHC :
No SVHC
Voltage - Rated DC :
-45V
Pbfree Code :
yes
Collector Emitter Voltage (VCEO) :
45V
Collector Emitter Breakdown Voltage :
45V
Terminal Form :
Gull wing
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Surface Mount :
yes
Number of Elements :
1
Transistor Application :
AMPLIFIER
Polarity/Channel Type :
PNP
Length :
1.65mm
Max Power Dissipation :
200mW
Transition Frequency :
100MHz
Base Part Number :
BC857*TT
Published :
2009
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
Terminal Position :
Dual
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Radiation Hardening :
No
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
-650mV
Datasheets
BC857BTT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi BC857BTT1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-75, SOT-416, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Base Part Number:BC857*TT, BC857BTT1G pinout, BC857BTT1G datasheet PDF, BC857BTT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC857BTT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC857BTT1G


PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount

BC857BTT1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.

BC857BTT1G Features


the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz


BC857BTT1G Applications


There are a lot of ON Semiconductor
BC857BTT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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