BC857BTT1G
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- Mfr.Part #
- BC857BTT1G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SC75 SOT416
- Stock
- 29,964
- In Stock ：
- 29,964
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BC857*TT
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Power - Max :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Voltage - Rated DC :
- -45V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Width :
- 900μm
- hFE Min :
- 150
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 100MHz
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Package / Case :
- SC-75, SOT-416
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 45V
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -650mV
- Published :
- 2009
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 200mW
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Height :
- 900μm
- Max Breakdown Voltage :
- 45V
- Length :
- 1.65mm
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 300mW
- Datasheets
- BC857BTT1G
BC857BTT1G Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount
BC857BTT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC857BTT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BTT1G Applications
There are a lot of ON Semiconductor
BC857BTT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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