BC857B-7-F
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- Mfr.Part #
- BC857B-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 11,461
- In Stock ：
- 11,461
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Published :
- 2008
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Transition Frequency :
- 200MHz
- Number of Terminations :
- 3
- Base Part Number :
- BC857B
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 45V
- Gain Bandwidth Product :
- 200MHz
- Max Junction Temperature (Tj) :
- 150°C
- Operating Temperature :
- -65°C~150°C TJ
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- -45V
- Frequency :
- 200MHz
- Width :
- 1.4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- -100mA
- Current - Collector Cutoff (Max) :
- 15nA
- Packaging :
- Tape and Reel (TR)
- Length :
- 3.05mm
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 220
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- -45V
- Collector Emitter Saturation Voltage :
- -250mV
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 19 Weeks
- Power Dissipation :
- 310mW
- Current - Collector (Ic) (Max) :
- 100mA
- Max Power Dissipation :
- 300mW
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -50V
- Height :
- 1.1mm
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- -5V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Weight :
- 7.994566mg
- Datasheets
- BC857B-7-F
BC857B-7-F Documents
PNP -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857B-7-F Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 200MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of -100mA volts is possible.
BC857B-7-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
BC857B-7-F Applications
There are a lot of Diodes Incorporated
BC857B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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