BC857AW,135
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- Mfr.Part #
- BC857AW,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC857AW - SMALL SIG
- Stock
- 310,000
- In Stock ：
- 310,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Frequency :
- 100MHz
- Package / Case :
- SC-70, SOT-323
- Gain Bandwidth Product :
- 100MHz
- Collector-Base Capacitance-Max :
- 5pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 200mW
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Factory Lead Time :
- 4 Weeks
- Pin Count :
- 3
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 45V
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Series :
- Automotive, AEC-Q101
- Base Part Number :
- BC857
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 50V
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 100mA
- Power Dissipation :
- 200mW
- Transistor Element Material :
- SILICON
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BC857AW,135
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857AW,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 125 @ 2mA 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.A maximum collector current of 100mA volts can be achieved.
BC857AW,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857AW,135 Applications
There are a lot of Nexperia USA Inc.
BC857AW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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