BC857AW,115
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- Mfr.Part #
- BC857AW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT323
- Stock
- 372
- In Stock ：
- 372
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 45V
- Base Part Number :
- BC857
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Collector-Base Capacitance-Max :
- 5pF
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Series :
- Automotive, AEC-Q101
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 200mW
- Pin Count :
- 3
- Max Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Frequency :
- 100MHz
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- SC-70, SOT-323
- Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- hFE Min :
- 125
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Application :
- SWITCHING
- Published :
- 2009
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Datasheets
- BC857AW,115
BC857AW,115 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857AW,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 125 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC857AW,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857AW,115 Applications
There are a lot of Nexperia USA Inc.
BC857AW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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