BC857AM,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Pin Count :

3

Max Collector Current :

-100mA

Packaging :

Tape and Reel (TR)

Transition Frequency :

100MHz

Element Configuration :

Single

Number of Terminations :

3

Number of Pins :

3

Base Part Number :

BC857

Gain Bandwidth Product :

100MHz

Collector Emitter Saturation Voltage :

-400mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

125 @ 2mA 5V

Collector Emitter Voltage (VCEO) :

-45V

Power - Max :

150mW

Factory Lead Time :

8 Weeks

hFE Min :

125

Power Dissipation :

430mW

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

15nA ICBO

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Mount :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Package / Case :

SC-101, SOT-883

Radiation Hardening :

No

Frequency :

100MHz

Transistor Type :

PNP

Terminal Position :

BOTTOM

Operating Temperature :

150°C TJ

Height :

500μm

Collector Base Voltage (VCBO) :

-50V

Published :

2008

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

-5V

Ambient Temperature Range High :

150°C

Case Connection :

COLLECTOR

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

45V

Current - Collector (Ic) (Max) :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

430mW