BC857ALT1G
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- Mfr.Part #
- BC857ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 4,581
- In Stock ：
- 4,581
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 125
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.04mm
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Power Dissipation :
- 300mW
- Pin Count :
- 3
- Voltage - Rated DC :
- -45V
- Max Breakdown Voltage :
- 45V
- Published :
- 2005
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Current Rating :
- -100mA
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -650mV
- Collector Base Voltage (VCBO) :
- 50V
- Radiation Hardening :
- No
- Height :
- 1.11mm
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Width :
- 1.4mm
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 225mW
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 45V
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Datasheets
- BC857ALT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857ALT1G Overview
This device has a DC current gain of 125 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -650mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BC857ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857ALT1G Applications
There are a lot of ON Semiconductor
BC857ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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