BC857,235
- Mfr.Part #
- BC857,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO236AB
- Stock
- 90
- In Stock :
- 90
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 4 Weeks
- Series :
- Automotive, AEC-Q101
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 45V
- Contact Plating :
- Tin
- Max Power Dissipation :
- 250mW
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Base Part Number :
- BC857
- Power Dissipation :
- 250mW
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 45V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Datasheets
- BC857,235

PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857,235 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC857,235 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857,235 Applications
There are a lot of Nexperia USA Inc.
BC857,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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